Design considerations of the sub-50nm self-aligned double gate MOSFET with a new channel doping profile

被引：0

作者：

Yin, HX ^{[1
]}

Xu, QX ^{[1
]}

机构：

[1] Chinese Acad Sci, Microelect Res & Dev Ctr, Beijing 100029, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a consideration to design a sub-50nm self-aligned double gate MOSFET for fabrication by the theory analysis, 3D device simulation and process consideration. The scaling limits of gate length in decided by various elements are analyzed at first. The optimization of the DG device structure parameters, such as thickness of Si film and spacer insulator is also illustrated. Meanwhile, we propose a new type of channel doping profile design, called SCD, whose advantages over other ways are discussed here in detail. The balance between the volume inversion operation mode and the control of V-th in the DG MOSFET is achieved.

引用

页码：535 / 538

页数：4

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