Amorphous silicon thin-film transistors made by microimprint lithography

被引：0
|
作者：
Choi, Jung-Su [1 ]
Choo, Byoung-Kwon [1 ]
Song, Na-Young [1 ]
Kim, Se-Hwan [1 ]
Park, Kyu-Chang [1 ]
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
来源：
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si:H TFTs exhibited a field-effect mobility of 1.2 cm(2)/V.s, threshold voltage of 1.9 V and on/off current ratio of 10(8). We investigated threshold voltage shift (Delta nV(th)) of UV-MIL a-Si;H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).
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收藏
页码：691 / 694
页数：4
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