Amorphous silicon thin-film transistors made by microimprint lithography

被引：0

作者：

Choi, Jung-Su ^{[1
]}

Choo, Byoung-Kwon ^{[1
]}

Song, Na-Young ^{[1
]}

Kim, Se-Hwan ^{[1
]}

Park, Kyu-Chang ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si:H TFTs exhibited a field-effect mobility of 1.2 cm(2)/V.s, threshold voltage of 1.9 V and on/off current ratio of 10(8). We investigated threshold voltage shift (Delta nV(th)) of UV-MIL a-Si;H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).

引用

页码：691 / 694

页数：4

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