Light-Induced Modulation in Resistance Switching of Carbon Nanotube/BiFeO3/Pt Heterostructure

被引：0

作者：

Chen, Yu ^{[1
]}

Zang, Yongyuan ^{[2
]}

Xie, Dan ^{[1
]}

Wu, Xiao ^{[1
]}

Ren, Tianling ^{[1
]}

Wei, Jinquan ^{[3
,4
]}

Wang, Kunlin ^{[3
,4
]}

Wu, Dehai ^{[3
,4
]}

Zhu, Hongwei ^{[3
,4
,5
]}

机构：

[1] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol TNList, Inst Microelect, Beijing 100084, Peoples R China

[2] McGill Univ, Montreal, PQ H3A 2T8, Canada

[3] Tsinghua Univ, Key Lab Adv Mfg Mat Proc Technol, Inst Microelect, Beijing 100084, Peoples R China

[4] Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China

[5] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2012年 / 132卷

基金：

中国国家自然科学基金;

关键词：

BFO; CNT; resistance switching; photovoltaic effect; OXIDE-FILMS; MATERIALS SCIENCE; SOLAR-CELLS; NANOTUBE; MECHANISM; DEVICES; BIFEO3;

D O I：

10.1080/10584587.2012.673986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a light-induced modulation effect in resistance switching of proposed carbon nanotube (CNT)/BiFeO3/Pt heterostructure. XRD, Raman, SEM, and AFM measurements confirm the quality of the BiFeO3 and CNT thin films achieved. Photovoltaic and resistance switching effects are identified in the proposed device structure. Resistance switching upon forward bias can be obviously modulated with light illumination. Dual asymmetric junctions in the heterojunction can be addressed as a critical factor. Our work indicates that CNT/BiFeO3/Pt heterostructure can be utilized in the light-coupled memory and I/O related applications.

引用

页码：53 / 60

页数：8

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