Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings

被引：20
|
作者：
Jang, Lee-Woon [1 ,2 ]
Jeon, Dae-Woo [1 ,2 ]
Chung, Tae-Hoon [3 ]
Polyakov, Alexander Y. [4 ]
Cho, Han-Su [1 ,2 ]
Yun, Jin-Hyeon [1 ,2 ]
Ju, Jin-Woo [3 ]
Baek, Jong-Hyeob [3 ]
Choi, Joo-Won [5 ]
Lee, In-Hwan [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea
[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea
[3] Korea Photon Technol Inst, LED Device Res Ctr, Kwangju 500779, South Korea
[4] Inst Rare Met, Moscow 119017, Russia
[5] Seoul OptoDevice Co, Device R&D Team, Gyeonggi 425851, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
EC-PEC; GaN LED; nanostructure; lift-off; GAN; LAYER; EFFICIENT;
D O I：
10.1021/am404285s
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.
引用
收藏
页码：985 / 989
页数：5
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