Fabrication of Photonic Crystal Light-emitting Diode with Photoelectrochemical Wet Etching and Phase Mask Interference

被引：0
|
作者：
Chen, Cheng-Yen [1 ]
Lin, Cheng-Hung [1 ]
Yeh, Dong-Ming [1 ]
Lu, Chih-Feng [1 ]
Huang, Chi-Feng [1 ]
Yang, C. C. [1 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10764, Taiwan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed. 2008 Optical Society of America
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页码：602 / 603
页数：2
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