P-N junction leakage current in hydrogen annealed wafer - DZ evaluation by junction leakage current

被引：0

作者：

Samata, S ^{[1
]}

Ito, E ^{[1
]}

Nagura, M ^{[1
]}

Udo, Y ^{[1
]}

Kubota, H ^{[1
]}

机构：

[1] TOSHIBA,SEMICOND MAT ENGN DEPT,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：262 / 271

页数：10

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