P-N junction leakage current in hydrogen annealed wafer - DZ evaluation by junction leakage current

被引：0
|
作者：
Samata, S [1 ]
Ito, E [1 ]
Nagura, M [1 ]
Udo, Y [1 ]
Kubota, H [1 ]
机构：
[1] TOSHIBA,SEMICOND MAT ENGN DEPT,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：262 / 271
页数：10
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