Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons

被引：125

作者：

Kim, Beak-Hyun ^{[1
]}

Cho, Chang-Hee ^{[1
]}

Mun, Jin-Soo ^{[1
]}

Kwon, Min-Ki ^{[1
]}

Park, Tae-Young ^{[1
]}

Kim, Jong Su ^{[2
]}

Byeon, Clare Chisu ^{[2
]}

Lee, Jongmin ^{[2
]}

Park, Seong-Ju ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 16期

关键词：

D O I：

10.1002/adma.200703096

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si ODs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.

引用

页码：3100 / 3104

页数：5

共 50 条

[31] Performance Enhancement of Quantum Dot Light-Emitting Diodes via Surface Modification of the Emitting Layer
Qiu, Yinglin
Gong, Zhipeng
Xu, Lei
Huang, Qiaocan
Yang, Zunxian
Ye, Bingqing
Ye, Yuliang
Meng, Zongyi
Zeng, Zhiwei
Shen, Zihong
Wu, Wenbo
Zhou, Yuanqing
Hong, Zeqian
Cheng, Zhiming
Ye, Songwei
Hong, Hongyi
Lan, Qianting
Li, Fushan
Guo, Tailiang
Xu, Sheng
ACS APPLIED NANO MATERIALS, 2022, 5 (02) : 2962 - 2972
[32] Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers
Leck, Kheng Swee
Divayana, Yoga
Zhao, Dewei
Yang, Xuyong
Abiyasa, Agus Putu
Mutlugun, Evren
Gao, Yuan
Liu, Shuwei
Tan, Swee Tiam
Sun, Xiao Wei
Demir, Hilmi Volkan
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (14) : 6535 - 6540
[33] HIGH QUANTUM EFFICIENCY FOR A POROUS SILICON LIGHT-EMITTING DIODE UNDER PULSED OPERATION
LINNROS, J
LALIC, N
APPLIED PHYSICS LETTERS, 1995, 66 (22) : 3048 - 3050
[34] Phosphorescent-Dye-Sensitized Quantum-Dot Light-Emitting Diodes with 37% External Quantum Efficiency
Wang, Yanping
Yang, Yusen
Zhang, Dingke
Zhang, Tong
Xie, Shiyi
Zhang, Yu
Zhao, Yong-Biao
Mi, Xiaoyun
Liu, Xiuling
ADVANCED MATERIALS, 2023, 35 (45)
[35] A porous silicon light-emitting diode with a high quantum efficiency during pulsed operation
Lalic, N
Linnros, J
THIN SOLID FILMS, 1996, 276 (1-2) : 155 - 158
[36] Inverted Device Architecture for Enhanced Performance of Flexible Silicon Quantum Dot Light-Emitting Diode
Ghosh, Batu
Yamada, Hiroyuki
Chinnathambi, Shanmugavel
Ozbilgin, Irem Nur Gamze
Shirahata, Naoto
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (18): : 5400 - 5407
[37] A full high-definition quantum dot light-emitting diode-on-silicon microdisplay
Jia, Siqi
Li, Depeng
Chen, Yixing
Mei, Guanding
Ma, Jingrui
Qu, Xiangwei
Tang, Haodong
Liu, Pai
Xu, Bing
Wang, Kai
Zhang, Zhikuan
Xia, Jun
Sun, Xiao Wei
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2023, 31 (09) : 548 - 558
[38] Quantum Dot Light-Emitting Diode with Ligand-Exchanged ZnCuInS2 Quantum Dot
Fukuda, Takeshi
Hishinuma, Masatomo
Maki, Junya
Sasaki, Hironao
IEICE TRANSACTIONS ON ELECTRONICS, 2017, E100C (11): : 943 - 948
[39] High Efficiency Quantum Dot Light-Emitting Diode by Solution Printing of Zinc Oxide Nanoparticles
Park, Da-Young
Lim, Jae-Noon
Ha, Mi-Young
Moon, Dae-Gyu
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (07) : 4454 - 4457
[40] Enhancement of external quantum efficiency through steric hindrance of phenazine derivative for white polymer light-emitting diode materials
Song, Ho Jun
Lee, Eui Jin
Kim, Doo Hun
Lee, Seung Min
Lee, Jang Yong
Moon, Doo Kyung
SYNTHETIC METALS, 2013, 181 : 98 - 103

← 1 2 3 4 5 →