Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons

被引：125
|
作者：
Kim, Beak-Hyun [1 ]
Cho, Chang-Hee [1 ]
Mun, Jin-Soo [1 ]
Kwon, Min-Ki [1 ]
Park, Tae-Young [1 ]
Kim, Jong Su [2 ]
Byeon, Clare Chisu [2 ]
Lee, Jongmin [2 ]
Park, Seong-Ju [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 16期
关键词：
D O I：
10.1002/adma.200703096
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si ODs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.
引用
收藏
页码：3100 / 3104
页数：5
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