Current bistability in InGaAs quantum wire p-i-n heterostructures

被引：0
|
作者：
Cingolani, R
Rinaldi, R
DeVittorio, M
Cola, A
Vasanelli, L
Marti, U
Reinhart, FK
机构：
[1] CNR,IST NUOVI MAT ELETTRON,I-73100 LECCE,ITALY
[2] ECOLE POLYTECH FED LAUSANNE,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND
来源：
SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期
关键词：
D O I：
10.1016/0038-1101(95)00306-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a clear evidence of bistability in the current-voltage (I-V) characteristics of p-i-n heterostructures containing InGaAs V-shaped quantum wires. The observed phenomenon is explained in the framework of a single carrier transport model in which the quantum wires act like traps for the vertical current. The charge trapping phenomenon is indeed demonstrated by capacitance-voltage (C-V) and photocurrent experiments.
引用
收藏
页码：437 / 439
页数：3
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