Current bistability in InGaAs quantum wire p-i-n heterostructures

被引：0
|
作者：
Cingolani, R
Rinaldi, R
DeVittorio, M
Cola, A
Vasanelli, L
Marti, U
Reinhart, FK
机构：
[1] CNR,IST NUOVI MAT ELETTRON,I-73100 LECCE,ITALY
[2] ECOLE POLYTECH FED LAUSANNE,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND
来源：
SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期
关键词：
D O I：
10.1016/0038-1101(95)00306-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a clear evidence of bistability in the current-voltage (I-V) characteristics of p-i-n heterostructures containing InGaAs V-shaped quantum wires. The observed phenomenon is explained in the framework of a single carrier transport model in which the quantum wires act like traps for the vertical current. The charge trapping phenomenon is indeed demonstrated by capacitance-voltage (C-V) and photocurrent experiments.
引用
收藏
页码：437 / 439
页数：3
相关论文
共 50 条
  • [31] Edge-coupled InGaAs p-i-n photodiode with a pseudowindow
    Ho, CL
    Wu, MC
    Ho, WJ
    Liaw, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) : 2088 - 2092
  • [32] AN INP INGAAS P-I-N HBT MONOLITHIC TRANSIMPEDANCE PHOTORECEIVER
    CHANDRASEKHAR, S
    JOHNSON, BC
    BONNEMASON, M
    TOKUMITSU, E
    GNAUCK, AH
    DENTAI, AG
    JOYNER, CH
    PERINO, JS
    QUA, GJ
    MONBERG, EM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (07) : 505 - 506
  • [33] Model Calibration of InGaAs/InP p-I-n Test Structures
    Walker, A. W.
    Pitts, O.
    Storey, C.
    Waldron, P.
    2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019), 2019, : 111 - 112
  • [34] Fabrication of the drift-enhanced InGaAs p-i-n photodetectors
    Li, G. Y.
    Niu, B.
    Gu, X. W.
    Wang, Y.
    Kong, Y. C.
    FIFTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION, 2019, 11023
  • [35] ENERGY-BAND DIAGRAMS OF P-I-N HETEROSTRUCTURES FOR SINGLE-QUANTUM-WELL LASERS
    LEE, J
    VASSELL, MO
    JAN, GJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1469 - 1476
  • [36] Current Oscillations in Multiple Quantum Well GaInNAs/GaAs p-i-n Structures
    Khalil, H. M.
    Mazzucato, S.
    Royall, B.
    Balkan, N.
    Guina, M.
    Hugues, M.
    2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2011,
  • [37] Computer modeling of bistability effect in P-I-N diode limiter characteristic
    Drozdovski, N
    Takano, T
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (04): : 148 - 150
  • [38] VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY
    TSANG, WT
    CAMPBELL, JC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1862 - 1862
  • [39] Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector
    Wang, Guosheng
    Xie, Feng
    Wang, Jun
    Wang, Run
    Li, Cong
    Guo, Jin
    9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING AND IMAGING, 2019, 10843
  • [40] Investigation of a p-i-n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots
    Kryzhanovskaya, N. V.
    Blokhin, S. A.
    Makhov, I. S.
    Moiseev, E. I.
    Nadtochiy, A. M.
    Fominykh, N. A.
    Mintairov, S. A.
    Kaluyzhnyy, N. A.
    Guseva, Yu. A.
    Kulagina, M. M.
    Zubov, F. I.
    Kolodeznyi, E. S.
    Maximov, M. V.
    Zhukov, A. E.
    SEMICONDUCTORS, 2023, 57 (13) : 594 - 598
12345