Highly efficient 2.7-2.9 GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7-2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381 mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10 W (40 dBm) output power with 76% and 82% power added efficiency (PAE), respectively. Both PAs have state-of-the-art PAE performance compared to the PAs in the literature. Furthermore, the measurement results show that; under the same operation conditions, the inverse class-F PA has greater PAE than the class-F PA.