Broadband Class-F Power Amplifiers for Handset Applications

被引：0

作者：

Kang, Daehyun ^{[1
]}

Choi, Jinsung ^{[1
]}

Jun, Myoungsu ^{[1
]}

Kim, Dongsu ^{[1
]}

Park, Jungmin ^{[1
]}

Jin, Boshi ^{[1
]}

Yu, Daekyu ^{[2
]}

Min, Kyoungjoon ^{[2
]}

Kim, Bumman ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect Engn, San 31, Pohang 790784, Gyeongbuk, South Korea

[2] Wireless Power Amplifier Module Inc, Seongnam 463824, Gyeongi, South Korea

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

EFFICIENCY CLASS-F;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband class-F power amplifier for handset application is developed covering 1.8 similar to 2.1 GHz. The amplifier maintains constant fundamental impedance and the second and third harmonic impedances to be located at the high efficiency area. The second and third harmonic impedances are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for the fundamental frequency. For demonstration, the PA is implemented using an InGaP/GaAs HBT process, and delivers 1 W output power (< 1 dB variation) and over 48% PAE (54% peak PAE) across 300 MHz bandwidth with a continuous wave (CW) signal and a 3.4 V supply voltage. The broadband class-F PA is promising technique for the EER technique with high-efficiency and broadband.

引用

页码：484 / +

页数：2

共 50 条

[1] Broadband HBT Doherty Power Amplifiers for Handset Applications
Kang, Daehyun
Kim, Dongsu
Moon, Junghwan
Kim, Bumman
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (12) : 4031 - 4039
[2] Driving waveforms for class-F power amplifiers
Rudiakova, AN
Krizhanovski, VG
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 473 - 476
[3] Driving waveforms for class-F power amplifiers
Rudiakova, A.N.
Krizhanovski, V.G.
IEEE MTT-S International Microwave Symposium Digest, 2000, 1 : 473 - 476
[4] Analysis of class-F and inverse class-F amplifiers
Inoue, Akira
Heima, Tetsuya
Ohta, Akira
Hattori, Ryo
Mitsui, Yasuo
IEEE MTT-S International Microwave Symposium Digest, 2000, 2 : 775 - 778
[5] Analysis of class-F and inverse class-F amplifiers
Inoue, A
Heima, T
Ohta, A
Hattori, R
Mitsui, Y
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 775 - 778
[6] Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers
Woo, Young Yun
Yang, Youngoo
Kim, Bumman
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (05) : 1969 - 1974
[7] On Optimal Truncated Biharmonic Current Waveforms for Class-F and Inverse Class-F Power Amplifiers
Juhas, Anamarija
Dautovic, Stanisa
Novak, Ladislav A.
MATHEMATICAL PROBLEMS IN ENGINEERING, 2017, 2017
[8] Efficiency comparison between highly efficient class-F and inverse class-F power amplifiers
Woo, Young Yun
Yang, Youngoo
Kim, Ildu
Kim, Bumman
IEEE MICROWAVE MAGAZINE, 2007, 8 (03) : 100 - +
[9] Class-F power amplifiers with reduced conduction angles
Raab, FH
IEEE TRANSACTIONS ON BROADCASTING, 1998, 44 (04) : 455 - 459
[10] Class-F power amplifiers with maximally flat waveforms
Green Mountain Radio Research Co, Colchester, United States
IEEE Trans Microwave Theory Tech, 11 (2007-2012):

← 1 2 3 4 5 →