Broadband Class-F Power Amplifiers for Handset Applications

被引：0
|
作者：
Kang, Daehyun [1 ]
Choi, Jinsung [1 ]
Jun, Myoungsu [1 ]
Kim, Dongsu [1 ]
Park, Jungmin [1 ]
Jin, Boshi [1 ]
Yu, Daekyu [2 ]
Min, Kyoungjoon [2 ]
Kim, Bumman [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Elect Engn, San 31, Pohang 790784, Gyeongbuk, South Korea
[2] Wireless Power Amplifier Module Inc, Seongnam 463824, Gyeongi, South Korea
来源：
2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年
关键词：
EFFICIENCY CLASS-F;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broadband class-F power amplifier for handset application is developed covering 1.8 similar to 2.1 GHz. The amplifier maintains constant fundamental impedance and the second and third harmonic impedances to be located at the high efficiency area. The second and third harmonic impedances are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for the fundamental frequency. For demonstration, the PA is implemented using an InGaP/GaAs HBT process, and delivers 1 W output power (< 1 dB variation) and over 48% PAE (54% peak PAE) across 300 MHz bandwidth with a continuous wave (CW) signal and a 3.4 V supply voltage. The broadband class-F PA is promising technique for the EER technique with high-efficiency and broadband.
引用
收藏
页码：484 / +
页数：2
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