Anomalous Nernst effect in epitaxial Fe and FexNi1-x alloy thin films

被引：5
|
作者：
Ma, L. [1 ]
Zhang, Y. [1 ]
Zhao, H. [1 ]
Fu, H. R. [1 ]
Tang, M. [2 ,3 ,4 ]
Yang, H. L. [2 ,3 ,4 ]
Shi, Z. [2 ,3 ,4 ]
Tian, N. [1 ]
You, C. Y. [1 ]
机构：
[1] Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Shaanxi, Peoples R China
[2] Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
[3] Tongji Univ, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China
[4] Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
来源：
AIP ADVANCES | 2019年 / 9卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Alloy thin films - Band fillings - Fe thin films - Film planes - Nernst effect - Technological applications - Theoretical study;
D O I：
10.1063/1.5079857
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The anomalous Nernst effect (ANE) is investigated experimentally in epitaxial fcc FexNi1-x (0<x<0.55) alloy thin films and bcc Fe thin film grown on MgO (001) substrates. The ANE measurements were performed at room temperature for various temperature gradients perpendicular to the film plane. The anomalous Nernst efficiency was indirectly characterized by the factor vN. It is found that both the ANE voltage V-ANE and the factor vN increase with raising the composition of Fe from 0 to 0.55, due to the presence of more abundant band structures. Moreover, the V-ANE and v(N) factor in bcc Fe thin film change sign and decrease sharply in magnitude compared to that of fcc Fe(x)Ni(1-)x thin films, indicating that the tuning effects of the band filling near Fermi surface on ANE. The present results will facilitate the theoretical studies of ANE and provide means of manipulating ANE for technological application. (C) 2019 Author(s).
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收藏
页数：5
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