Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
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Scheffler, D.
[1
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Beckert, S.
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Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, GermanyTech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
Beckert, S.
[1
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Reichlova, H.
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Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
ASCR, Inst Phys, Vvi, Cukrovarnicka 10, Prague 16253 6, Czech RepublicTech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
Reichlova, H.
[1
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Woodcock, T. G.
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IFW Dresden, Leibniz Inst Solid State & Mat Res Dresden, D-01069 Dresden, GermanyTech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
Woodcock, T. G.
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Goennenwein, S. T. B.
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Univ Konstanz, Dept Phys, D-78457 Constance, GermanyTech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
Goennenwein, S. T. B.
[4
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Thomas, A.
[1
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[1] Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
tau-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited tau-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 +/- 0.24) mu V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, tau-MnAl is a promising candidate for spin-caloritronic research.
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Chinese Acad Sci, State Key Lab Supperlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Cornell Univ, Ithaca, NY 14850 USAChinese Acad Sci, State Key Lab Supperlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Zhu, L. J.
Zhao, J. H.
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Chinese Acad Sci, State Key Lab Supperlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, State Key Lab Supperlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China