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Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
被引:2
|作者:
Scheffler, D.
[1
]
Beckert, S.
[1
]
Reichlova, H.
[1
,2
]
Woodcock, T. G.
[3
]
Goennenwein, S. T. B.
[4
]
Thomas, A.
[1
,3
]
机构:
[1] Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
[2] ASCR, Inst Phys, Vvi, Cukrovarnicka 10, Prague 16253 6, Czech Republic
[3] IFW Dresden, Leibniz Inst Solid State & Mat Res Dresden, D-01069 Dresden, Germany
[4] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
关键词:
PERMANENT-MAGNETS;
HALL;
COEFFICIENT;
D O I:
10.1063/5.0179071
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
tau-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited tau-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 +/- 0.24) mu V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, tau-MnAl is a promising candidate for spin-caloritronic research.
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