Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films

被引:2
|
作者
Scheffler, D. [1 ]
Beckert, S. [1 ]
Reichlova, H. [1 ,2 ]
Woodcock, T. G. [3 ]
Goennenwein, S. T. B. [4 ]
Thomas, A. [1 ,3 ]
机构
[1] Tech Univ Dresden, Inst Solid State & Mat Phys, D-01062 Dresden, Germany
[2] ASCR, Inst Phys, Vvi, Cukrovarnicka 10, Prague 16253 6, Czech Republic
[3] IFW Dresden, Leibniz Inst Solid State & Mat Res Dresden, D-01069 Dresden, Germany
[4] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
关键词
PERMANENT-MAGNETS; HALL; COEFFICIENT;
D O I
10.1063/5.0179071
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
tau-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited tau-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 +/- 0.24) mu V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, tau-MnAl is a promising candidate for spin-caloritronic research.
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收藏
页数:5
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