A novel CPW structure for high-speed interconnects

被引：0

作者：

Yoon, SJ ^{[1
]}

Jeong, SH ^{[1
]}

Yook, JG ^{[1
]}

Kim, YJ ^{[1
]}

Lee, SG ^{[1
]}

Seo, OK ^{[1
]}

Lim, KS ^{[1
]}

Kim, DS ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Kwangju, South Korea

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For high-speed digital circuits a novel elevated-CPW (ECPW) structure with low loss and low dispersion is proposed and the performances are well compared with the theoretical prediction. The ECPW is designed with the aid of time domain fullwave FDTD technique and is fabricated using conventional thick-film MEMS processing. Proposed structure reveal at least 10dB lower insertion loss compared to conventional CPW geometries and effective permittivity is 4 to 6 times smaller than that of conventional CPW. Characteristic impedances and effective permittivities are given for various geometrical parameters.

引用

页码：771 / 774

页数：4

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