X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures

被引：5
|
作者：
Mori, G
Lazzarino, M
Ercolani, D
Biasiol, G
Locatelli, A
Sorba, L
Heun, S
机构：
[1] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[2] Univ Studi Trieste, I-34127 Trieste, Italy
[3] Univ Studi Modena & Reggio Emilia, I-41100 Modena, Italy
[4] Sincrotrone Trieste Scpa, I-34012 Trieste, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 246卷 / 01期
关键词：
LAO; XPS; GaAs oxides; AlAs oxides; electron spectroscopy; material mixing; Al enrichment;
D O I：
10.1016/j.nimb.2005.12.005
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The variation of the surface chemical composition of nanostructures fabricated by local anodic oxidation (LAO) on epitaxial GaAs/AlAs/GaAs layered structures is investigated by means of laterally-resolved photoemission spectroscopy. Our analysis evidences the unexpected presence of Al compounds located in the topmost layers of the LAO oxide structures. We Studied the evolution of the surface chemical composition of such nanostructures as a function of X-ray exposure time (photon energy hv = 130 eV) and we found a reduction in the amount of the surface Ga oxide compounds with respect to the Al compounds. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：39 / 44
页数：6
相关论文
共 50 条
  • [1] X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
    Colombi, Paolo
    Bontempi, Elza
    Depero, Laura E.
    Azuma, Yasushi
    Fujimoto, Toshiyuki
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
  • [2] X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer
    Mogilyanski, D
    Blumin, M
    Gartstein, E
    Opitz, R
    Kohler, R
    EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 2000, 321-3 : 445 - 450
  • [3] X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer
    Mogilyanski, D.
    Blumin, M.
    Gartstein, E.
    Opitz, R.
    Kohler, R.
    Materials Science Forum, 2000, 321
  • [4] Fluorescence X-ray standing wave study on (AlAs)(GaAs) superlattices
    Stanford Synchrt. Radiat. Lab. S., 2575 Sand Hill Road, Menlo Park, CA 94025, United States
    不详
    不详
    不详
    不详
    J Phys D, 10 A (A65-A70):
  • [5] X-RAY STUDY ON IMPURITY DIFFUSION IN A GAAS-ALAS SUPERLATTICE
    TERAUCHI, H
    SEKIMOTO, S
    SANO, N
    KATO, H
    NAKAYAMA, M
    APPLIED PHYSICS LETTERS, 1984, 44 (10) : 971 - 973
  • [6] Fluorescence x-ray standing wave study on (AlAs)(GaAs) superlattices
    Lessmann, A
    Schuster, M
    Riechert, H
    Brennan, S
    Munkholm, A
    Materlik, G
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (10A) : A65 - A70
  • [7] X-RAY EVIDENCE FOR A TERRACED GAAS ALAS SUPER-LATTICE
    NEUMANN, DA
    ZABEL, H
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1983, 43 (01) : 59 - 61
  • [8] X-ray photoelectron spectroscopic analysis of the oxide of GaAs
    Ishikawa, Toshifumi, 1600, (31):
  • [9] X-RAY PHOTOELECTRON SPECTROSCOPIC ANALYSIS OF THE OXIDE OF GAAS
    ISHIKAWA, T
    IKOMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12A): : 3981 - 3987
  • [10] Studies of interfacial roughness of GaAs/AlAs superlattices by grazing incidence X-ray scattering
    Huang, S
    Ming, ZH
    Soo, YL
    Kao, YH
    Chang, T
    Fu, LP
    Gilliland, GD
    Klem, J
    Hafich, M
    MODERN PHYSICS LETTERS B, 1997, 11 (24): : 1057 - 1067
12345