X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures

被引：5
|
作者：
Mori, G
Lazzarino, M
Ercolani, D
Biasiol, G
Locatelli, A
Sorba, L
Heun, S
机构：
[1] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[2] Univ Studi Trieste, I-34127 Trieste, Italy
[3] Univ Studi Modena & Reggio Emilia, I-41100 Modena, Italy
[4] Sincrotrone Trieste Scpa, I-34012 Trieste, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 246卷 / 01期
关键词：
LAO; XPS; GaAs oxides; AlAs oxides; electron spectroscopy; material mixing; Al enrichment;
D O I：
10.1016/j.nimb.2005.12.005
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The variation of the surface chemical composition of nanostructures fabricated by local anodic oxidation (LAO) on epitaxial GaAs/AlAs/GaAs layered structures is investigated by means of laterally-resolved photoemission spectroscopy. Our analysis evidences the unexpected presence of Al compounds located in the topmost layers of the LAO oxide structures. We Studied the evolution of the surface chemical composition of such nanostructures as a function of X-ray exposure time (photon energy hv = 130 eV) and we found a reduction in the amount of the surface Ga oxide compounds with respect to the Al compounds. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：39 / 44
页数：6
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