Preparation and properties of Ge-Ga-S glasses for laser hosts

被引:127
|
作者
Abe, K [1 ]
Takebe, H [1 ]
Morinaga, K [1 ]
机构
[1] KYUSHU UNIV,GRAD SCH ENGN SCI,DEPT MAT SCI & TECHNOL,KASUGA,FUKUOKA 816,JAPAN
关键词
D O I
10.1016/S0022-3093(96)00655-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The preparation and purification of Ge-Ga-S glasses were studied. A purified glass doped with 1000 ppm Pr3+ exhibits a quantum efficiency of 50% in the (1)G(4)-->H-3(5) transition at 1.3 mu m based on fluorescence lifetime measurement and Judd-Ofelt analysis. The effects of Ga and S contents on glass transition and crystallization temperatures, density, refractive index and spontaneous emission probabilities from the F-4(3/2) level of Nd3+ were examined. Compositional dependences of properties are discussed in terms of bond types.
引用
收藏
页码:143 / 150
页数:8
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