Attomolar streptavidin and pH, low power sensor based on 3D vertically stacked SiNW FETs

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作者
Buitrago, Elizabeth [1 ]
Fernandez-Bolanos, Montserrat [1 ]
Georgiev, Yordan M. [2 ]
Yu, Ran [2 ]
Lotty, Olan [2 ]
Holmes, Justin D. [2 ]
Nightingale, Adrian M. [3 ]
Ionescu, Adrian M. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Nanolab, CH-1015 Lausanne, Switzerland
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Mat Chem & Anal Grp, Cork, Ireland
[3] Univ London Imperial Coll Sci Technol & Med, London, England
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中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7x20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-kappa gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)- triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasiexponential drain current responses (Delta I-d/pH) of similar to 0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 mu A/pH and high sensitivities (S similar to 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.
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