Novel design for a-Si:H TFTs with promising mechanical reliability on flexible substrate

被引：0
|
作者：
Chen, Po-Chiu [1 ]
Ho, King-Yuan [1 ]
Lee, Min-Hung [1 ]
Cheng, Chun-Cheng [1 ]
Yeh, Yung-Hui [1 ]
机构：
[1] Ind Technol Res Inst, Display Technol Ctr, Hsinchu, Taiwan
来源：
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 degrees C under 1x10(4) Cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.
引用
收藏
页码：723 / 726
页数：4
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