Novel design for a-Si:H TFTs with promising mechanical reliability on flexible substrate

被引：0
|
作者：
Chen, Po-Chiu [1 ]
Ho, King-Yuan [1 ]
Lee, Min-Hung [1 ]
Cheng, Chun-Cheng [1 ]
Yeh, Yung-Hui [1 ]
机构：
[1] Ind Technol Res Inst, Display Technol Ctr, Hsinchu, Taiwan
来源：
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 degrees C under 1x10(4) Cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.
引用
收藏
页码：723 / 726
页数：4
相关论文
共 50 条
  • [21] Enhanced Performance and Thermal Stability of a-Si:H TFTs
    Indluru, A.
    Alford, T. L.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H467 - H470
  • [22] Low dose radiation effects on a-Si:H TFTs
    Picos, R.
    Papadopoulos, N. P.
    Lee, Czang-Ho
    Lopez-Grifol, A.
    Roca, M.
    Isern, E.
    Wong, William S.
    Garcia-Moreno, E.
    PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2015, : 32 - +
  • [23] Temperature instability of low-temperature deposited a-Si:H TFTs fabricated on plastic substrate
    Ho, K. Y.
    Cheng, C. H.
    Cheng, C. C.
    Chen, P. C.
    Yeh, Y. H.
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2008, 16 (06) : 683 - 689
  • [24] Modeling of Reverse Subthreshold Currents in The A-Si:H TFTs
    Liu, Yuan
    En, Yun-Fei
    He, Yu-Juan
    Shi, Qian
    PROCEEDINGS OF 2013 INTERNATIONAL CONFERENCE ON QUALITY, RELIABILITY, RISK, MAINTENANCE, AND SAFETY ENGINEERING (QR2MSE), VOLS I-IV, 2013, : 1110 - 1112
  • [25] Enhanced Performance and Thermal Stability of a-Si:H TFTs
    Indluru, A.
    Alford, T. L.
    THIN FILM TRANSISTORS 10 (TFT 10), 2010, 33 (05): : 57 - 64
  • [26] Effect of the compensation layer on the performance of a-Si:H TFTS
    Zhang, SQ
    Xu, ZY
    Zou, XC
    Wang, CG
    Zhou, XM
    Zhao, BF
    Dai, YB
    Wan, XH
    Ding, H
    PROCEEDINGS OF THE FOURTH ASIAN SYMPOSIUM ON INFORMATION DISPLAY, 1997, : 73 - 76
  • [27] Dynamics of metastable defects in a-Si:H/SiN TFTs
    Merticaru, AR
    Mouthaan, AJ
    THIN SOLID FILMS, 2001, 383 (1-2) : 122 - 124
  • [28] A Novel Technology for a-Si TFTs with High Aperture Ratio
    Lo, Wan-Yu
    Chen, Maw-Song
    Huang, Wei-Ming
    IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2011, : 179 - 180
  • [29] Temperature-dependent electrical characteristics of low temperature a-Si: H TFTs fabricated on plastic substrate
    Ho, K. Y.
    Chen, P. C.
    Cheng, C. H.
    Cheng, C. C.
    Yeh, Y. H.
    IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, : 315 - 318
  • [30] Effect of mechanical stress on the performance of an a-Si:H TFT on plastic substrate
    Won, SH
    Lee, CB
    Hur, JH
    Jang, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S685 - S687
12345