High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition

3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared at deposition temperature (T-dep) of 1423-1523K, whereas the 3C-SiC (111) epitaxial films were obtained at 1573-1648K with the thickness of 5.40 to 9.32m. The in-plane relationship was 3C-SiC [-1-12]//Si [001] and 3C-SiC [-110]//Si [-110]. The deposition rates (R-dep) were 16.2-28.0m/h, which are 2 to 100 times higher than that of 3C-SiC (111) epi-grown on Si (111) by conventional CVD. The growth mechanism of 3C-SiC (111) epitaxial films has also been proposed.