High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition

被引：18

作者：

Sun, Qingyun ^{[1
]}

Zhu, Peipei ^{[1
]}

Xu, Qingfang ^{[1
]}

Tu, Rong ^{[1
]}

Zhang, Song ^{[1
]}

Shi, Ji ^{[1
,2
]}

Li, Haiwen ^{[1
,3
]}

Zhang, Lianmeng ^{[1
]}

Goto, Takashi ^{[1
,4
]}

Yan, Jiasheng ^{[1
,5
]}

Li, Shusen ^{[5
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Hubei, Peoples R China

[2] Tokyo Inst Technol, Sch Mat & Chem Technol, Tokyo, Japan

[3] Kyushu Univ, Int Res Ctr Hydrogen Energy, Fukuoka, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan

[5] Tech Semicond, Xiangyang, Hubei, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2018年 / 101卷 / 03期

基金：

对外科技合作项目（国际科技项目）; 中国国家自然科学基金;

关键词：

3C-SiC (111); heteroepitaxial growth; laser CVD; orientation; Si (110); LOW-TEMPERATURE GROWTH; EPITAXIAL-GROWTH; SI(110) SUBSTRATE; SILICON SUBSTRATE; ROTATED EPITAXY; GRAPHENE; QUALITY; DEFECTS; MECHANISM; CRYSTAL;

D O I：

10.1111/jace.15260

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared at deposition temperature (T-dep) of 1423-1523K, whereas the 3C-SiC (111) epitaxial films were obtained at 1573-1648K with the thickness of 5.40 to 9.32m. The in-plane relationship was 3C-SiC [-1-12]//Si [001] and 3C-SiC [-110]//Si [-110]. The deposition rates (R-dep) were 16.2-28.0m/h, which are 2 to 100 times higher than that of 3C-SiC (111) epi-grown on Si (111) by conventional CVD. The growth mechanism of 3C-SiC (111) epitaxial films has also been proposed.

引用

页码：1048 / 1057

页数：10

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