Generation of second harmonic radiation from sub-stoichiometric silicon nitride thin films

被引:21
|
作者
Pecora, Emanuele Francesco [1 ,2 ]
Capretti, Antonio [1 ,2 ,3 ]
Miano, Giovanni [3 ]
Dal Negro, Luca [1 ,2 ,4 ]
机构
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA
[3] Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy
[4] Boston Univ, Div Mat Sci & Engn, Brookline, MA 02446 USA
关键词
OPTICAL MICROCAVITIES; CHIP; SPECTROSCOPY; DEFORMATION; REFLECTION; STRAIN; LIGHT;
D O I
10.1063/1.4801873
中图分类号
O59 [应用物理学];
学科分类号
摘要
Enhancing second-order optical processes in Si-compatible materials is important for the demonstration of innovative functionalities and nonlinear optical devices integrated on a chip. Here, we demonstrate significantly enhanced Second-Harmonic Generation (SHG) by silicon-rich silicon nitride materials over a broad spectral range, and show a maximum conversion efficiency of 4.5 x 10(-6) for sub-stoichiometric samples with 46 at. % silicon. The SHG process in silicon nitride thin films is systematically investigated over a range of material stoichiometry and thermal annealing conditions. These findings can enable the engineering of innovative Si-based devices for nonlinear signal processing and sensing applications on a Si platform. (C) 2013 AIP Publishing LLC
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页数:5
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