Subband electron mobility in selectively delta-doped GaAs/GaAlAs heterostructures with high carrier density

被引：0

作者：

Kulbachinskii, VA ^{[1
]}

Lunin, RA ^{[1
]}

Kytin, VG ^{[1
]}

Bugaev, AS ^{[1
]}

Mokerov, VG ^{[1
]}

Senichkin, AP ^{[1
]}

机构：

[1] RAS, INST RADIOENGN & ELECT, MOSCOW 117901, RUSSIA

来源：

COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We synthesised and investigated new high-carrier-density GaAs/GaAlAs heterostructures with combined doping, that is with delta-doping by Si of GaAs and uniform doping by Si of GaAlAs layers. The Hall effect and magnetoresistance were investigated for the structures with distances L-delta between heterojunction and delta-layer from 200 Angstrom, to 1200 Angstrom. The enhanced 2D electron concentration achieved was 1.1*10(-13) cm(-2) in six filled subbands for the sample with L-delta=750 Angstrom. Electron mobilities and concentrations in each 2D subband have been extracted from the magnetoresistance and fall effect data. The electron mobility due to the scattering from ionized impurities has been calculated in the case when several subband are occupied.

引用

页码：957 / 960

页数：4

共 50 条

[41] ELECTRON-ENERGY LEVELS IN A DELTA-DOPED LAYER IN GAAS
DEGANI, MH
PHYSICAL REVIEW B, 1991, 44 (11): : 5580 - 5584
[42] EFFECT OF SPATIAL LOCALIZATION OF DOPANT ATOMS ON THE CONFINING POTENTIAL AND ELECTRON SUBBAND STRUCTURE IN DELTA-DOPED GAAS-SI
RICHARDS, D
WAGNER, J
RAMSTEINER, M
EKENBERG, U
FASOL, G
PLOOG, K
SURFACE SCIENCE, 1992, 267 (1-3) : 61 - 64
[43] Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel
Li, YJ
Shieh, HM
Su, JS
Kao, MJ
Hsu, WC
MATERIALS CHEMISTRY AND PHYSICS, 1999, 61 (03) : 266 - 269
[44] Control of ferromagnetism in Mn delta-doped GaAs-based semiconductor heterostructures
Nazmul, AM
Kobayashi, S
Sugahara, S
Tanaka, M
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 937 - 942
[45] Effect of the hydrostatic pressure on the electron mobility in delta-doped systems
Oubram, O.
Mora-Ramos, M. E.
Gaggero-Sager, L. M.
XIX LATIN AMERICAN SYMPOSIUM ON SOLID STATE PHYSICS (SLAFES), 2009, 167
[46] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES
MENDEZ, EE
PRICE, PJ
HEIBLUM, M
APPLIED PHYSICS LETTERS, 1984, 45 (03) : 294 - 296
[47] DOPANT DISTRIBUTION FOR MAXIMUM CARRIER MOBILITY IN SELECTIVELY DOPED AL0.30GA0.70AS/GAAS HETEROSTRUCTURES
SCHUBERT, EF
PFEIFFER, L
WEST, KW
IZABELLE, A
APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1350 - 1352
[48] Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors
Chu, Kuei-Yi
Cheng, Shiou-Ying
Chiang, Meng-Hsueh
Liu, Yi-Jung
Huang, Chien-Chang
Chen, Tai-You
Hsu, Chi-Shiang
Liu, Wen-Chau
Cheng, Wen-Yu
Lin, Bin-Cian
SUPERLATTICES AND MICROSTRUCTURES, 2011, 50 (04) : 289 - 295
[49] MBE-GROWN SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON MOBILITY TRANSISTORS.
Hiyamizu, Satoshi
Mimura, Takashi
Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 258 - 271
[50] RAMAN-STUDY OF ELECTRON CONFINEMENT IN SI DELTA-DOPED GAAS
MLAYAH, A
CARLES, R
BEDEL, E
MUNOZYAGUE, A
APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2848 - 2850

← 1 2 3 4 5 →