Subband electron mobility in selectively delta-doped GaAs/GaAlAs heterostructures with high carrier density

被引：0
|
作者：
Kulbachinskii, VA [1 ]
Lunin, RA [1 ]
Kytin, VG [1 ]
Bugaev, AS [1 ]
Mokerov, VG [1 ]
Senichkin, AP [1 ]
机构：
[1] RAS, INST RADIOENGN & ELECT, MOSCOW 117901, RUSSIA
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We synthesised and investigated new high-carrier-density GaAs/GaAlAs heterostructures with combined doping, that is with delta-doping by Si of GaAs and uniform doping by Si of GaAlAs layers. The Hall effect and magnetoresistance were investigated for the structures with distances L-delta between heterojunction and delta-layer from 200 Angstrom, to 1200 Angstrom. The enhanced 2D electron concentration achieved was 1.1*10(-13) cm(-2) in six filled subbands for the sample with L-delta=750 Angstrom. Electron mobilities and concentrations in each 2D subband have been extracted from the magnetoresistance and fall effect data. The electron mobility due to the scattering from ionized impurities has been calculated in the case when several subband are occupied.
引用
收藏
页码：957 / 960
页数：4
相关论文
共 50 条
  • [31] ELECTRON VELOCITY IN GAAS - BULK AND SELECTIVELY DOPED HETEROSTRUCTURES
    MASSELINK, WT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 503 - 512
  • [32] Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures
    Meftah, A.
    Ajlani, H.
    Aloulou, S.
    Oueslati, M.
    Scalbert, D.
    Allegre, J.
    Maaref, H.
    JOURNAL OF LUMINESCENCE, 2008, 128 (08) : 1317 - 1322
  • [33] Charge transfer and electron mobility in GaAlAs/GaAs modulation-doped heterostructures: The role of interface states
    Sibari, H
    Raymond, A
    Kubisa, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (07) : 1002 - 1008
  • [34] INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS/INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES
    SHIEH, HM
    HSU, WC
    KAO, MJ
    WU, CL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 154 - 157
  • [35] Intersubband-coupling and screening effects on the electron subband mobility in a GaAs/InxGa1-xAs delta-doped double quantum well system
    Sahu, T
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5576 - 5581
  • [36] CHARACTERISTICS OF DELTA-DOPED INGAAS/GAAS PSEUDOMORPHIC DOUBLE-QUANTUM-WELL HIGH-ELECTRON-MOBILITY TRANSISTORS
    HSU, RT
    KAO, MJ
    WANG, JS
    HSU, WC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 273 - 275
  • [37] Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures
    Lu, W
    Lee, JH
    Yoon, HS
    Park, CS
    Pyun, KE
    Lee, HG
    Suh, KS
    Jogai, B
    SOLID STATE COMMUNICATIONS, 1996, 99 (10) : 713 - 716
  • [38] A NEW DELTA-DOPED INGAAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR UTILIZING A STRAINED SUPERLATTICE SPACER
    SHIEH, HM
    HSU, WC
    KAO, MJ
    WU, CL
    WU, TS
    SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1117 - 1119
  • [39] ON SUBBAND MOBILITIES OBSERVED IN DELTA-DOPED ALGAAS/GAAS QUANTUM-WELLS AND GAAS-LAYERS
    DOBACZEWSKI, L
    MAUDE, DK
    MISSOUS, M
    PORTAL, JC
    ACTA PHYSICA POLONICA A, 1995, 87 (01) : 201 - 204
  • [40] NONLINEAR ELECTRON-TRANSPORT IN SI DELTA-DOPED GAAS
    LI, G
    XU, W
    HAWKER, P
    ALLERMAN, AA
    HAUSER, N
    JAGADISH, C
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (01) : 55 - 59
12345