Subband electron mobility in selectively delta-doped GaAs/GaAlAs heterostructures with high carrier density

被引：0
|
作者：
Kulbachinskii, VA [1 ]
Lunin, RA [1 ]
Kytin, VG [1 ]
Bugaev, AS [1 ]
Mokerov, VG [1 ]
Senichkin, AP [1 ]
机构：
[1] RAS, INST RADIOENGN & ELECT, MOSCOW 117901, RUSSIA
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We synthesised and investigated new high-carrier-density GaAs/GaAlAs heterostructures with combined doping, that is with delta-doping by Si of GaAs and uniform doping by Si of GaAlAs layers. The Hall effect and magnetoresistance were investigated for the structures with distances L-delta between heterojunction and delta-layer from 200 Angstrom, to 1200 Angstrom. The enhanced 2D electron concentration achieved was 1.1*10(-13) cm(-2) in six filled subbands for the sample with L-delta=750 Angstrom. Electron mobilities and concentrations in each 2D subband have been extracted from the magnetoresistance and fall effect data. The electron mobility due to the scattering from ionized impurities has been calculated in the case when several subband are occupied.
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页码：957 / 960
页数：4
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