Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model

被引：31
|
作者：
Levada, S [1 ]
Meneghini, M
Meneghesso, G
Zanoni, E
机构：
[1] Univ Padua, Dept Informat Engn, Padua, Italy
[2] INFM, I-35131 Padua, Italy
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2005年 / 5卷 / 04期
关键词：
gallium compounds; light-emitting diodes; reliability estimation; stress; Weibull distributions;
D O I：
10.1109/TDMR.2005.860817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gallium-nitride-based light-emitting diode (LED) accelerated life tests were carried out over devices adopting two different packaging schemes (i.e., with plastic transparent encapsulation or with pure metallic package). Data analyses were done using a Weibull-based statistical description with the aim of estimating the effect of high current on device performance. A consistent statistical model was found with the capability to estimate the mean time to failure (MTTF) of devices during DC current stress and the accelerating factors of high current stresses.
引用
收藏
页码：688 / 693
页数：6
相关论文
共 50 条
  • [31] Current spreading analysis in vertical electrode GaN-based blue LEDs
    Yun, Joo Sun
    Hwang, Sung Min
    Shim, Jong In
    SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841
  • [32] Statistical analysis of mixed data in Weibull distribution from life test under stepwisely accelerated stress
    Wu, S.
    Huaqiao Daxue Xuebao/Journal of Huaqiao University, 2001, 22 (01): : 10 - 16
  • [33] Statistical inference of accelerated life test with competing failures based on three-parameter weibull distribution
    Zhang, Xiang-Po
    Shang, Jian-Zhong
    Chen, Xun
    Zhang, Chun-Hua
    Wang, Ya-Shun
    Binggong Xuebao/Acta Armamentarii, 2013, 34 (12): : 1603 - 1610
  • [34] Statistical analysis using multiple censoring scheme under partially accelerated life tests for the power Lindley distribution
    Alam, Intekhab
    Kamal, Mustafa
    Rahman, Ahmadur
    Agarwal, Trapty
    Mishra, Awakash
    INTERNATIONAL JOURNAL OF SYSTEM ASSURANCE ENGINEERING AND MANAGEMENT, 2024, 15 (07) : 3424 - 3436
  • [35] ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
    Dal Lago, M.
    Meneghini, M.
    De Santi, C.
    Barbato, M.
    Trivellin, N.
    Meneghesso, G.
    Zanoni, E.
    MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 2138 - 2141
  • [36] Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices
    Khan, Md Ashfaque Hossain
    Debnath, Ratan
    Motayed, Abhishek
    Rao, Mulpuri V.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2020, 20 (04) : 742 - 747
  • [37] Reliability analysis under constant-stress partially accelerated life tests using hybrid censored data from Weibull distribution
    Ismail, Ali A.
    HACETTEPE JOURNAL OF MATHEMATICS AND STATISTICS, 2016, 45 (01): : 181 - 193
  • [38] Statistical planning and inference in accelerated life testing using the CHSS model
    Bagdonavicius, V
    Cheminade, O
    Nikulin, M
    JOURNAL OF STATISTICAL PLANNING AND INFERENCE, 2004, 126 (02) : 535 - 551
  • [39] ACCURACY OF APPROX CONFIDENCE-BOUNDS USING CENSORED WEIBULL REGRESSION DATA FROM ACCELERATED LIFE TESTS
    VANDERWIEL, SA
    MEEKER, WQ
    IEEE TRANSACTIONS ON RELIABILITY, 1990, 39 (03) : 346 - 351
  • [40] INTERVAL ESTIMATION FOR CENSORED ACCELERATED LIFE TESTS BASED ON THE LOGNORMAL MODEL
    SCHNEIDER, H
    WEISSFELD, L
    JOURNAL OF QUALITY TECHNOLOGY, 1989, 21 (01) : 24 - 31
12345