Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model

被引：31
|
作者：
Levada, S [1 ]
Meneghini, M
Meneghesso, G
Zanoni, E
机构：
[1] Univ Padua, Dept Informat Engn, Padua, Italy
[2] INFM, I-35131 Padua, Italy
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2005年 / 5卷 / 04期
关键词：
gallium compounds; light-emitting diodes; reliability estimation; stress; Weibull distributions;
D O I：
10.1109/TDMR.2005.860817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gallium-nitride-based light-emitting diode (LED) accelerated life tests were carried out over devices adopting two different packaging schemes (i.e., with plastic transparent encapsulation or with pure metallic package). Data analyses were done using a Weibull-based statistical description with the aim of estimating the effect of high current on device performance. A consistent statistical model was found with the capability to estimate the mean time to failure (MTTF) of devices during DC current stress and the accelerating factors of high current stresses.
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页码：688 / 693
页数：6
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