Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

被引：5

作者：

Li, Meng ^{[1
]}

Oh, Sung-Kwen ^{[1
]}

Shin, Hong-Sik ^{[1
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dep EE, Taejon, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 03期

关键词：

Nickel silicide; titanium; co-sputtering; two-step RTP; thermal stability;

D O I：

10.5573/JSTS.2013.13.3.252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

引用

页码：252 / 258

页数：7

共 30 条

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