Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

被引：4

作者：

Shin, Hong-Sik ^{[1
]}

Oh, Se-Kyung ^{[1
]}

Kang, Min-Ho ^{[1
]}

Lee, Ga-Won ^{[1
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2010年 / 10卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Boron Cluster (B18H22); shallow junction; Ni silicide; nano-scale CMOSFETs; vacuum annealing; NICKEL SILICIDE; DIFFUSION;

D O I：

10.5573/JSTS.2010.10.4.260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, Ni suicide is formed on boron cluster (B18H22) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on B18H22 implanted Si substrate exhibited greater sheet resistance than on the BF2 implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using N-2 annealing.

引用

页码：260 / 264

页数：5

共 2 条

[1] Improvement of Heavy Dopant Doped Ni-Silicide Using Ytterbium Inter layer for Nano-Scale MOSFETs with an Ultra Shallow Junction
Shin, Hong-Sik
Oh, Se-Kyung
Kang, Min-Ho
Li, Shi-Guang
Lee, Ga-Won
Lee, Hi-Deok
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (07) : 5628 - 5632
[2] Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology
Li, Meng
Oh, Sung-Kwen
Shin, Hong-Sik
Lee, Hi-Deok
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13 (03) : 252 - 258

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