Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

被引：5
|
作者：
Li, Meng [1 ]
Oh, Sung-Kwen [1 ]
Shin, Hong-Sik [1 ]
Lee, Hi-Deok [1 ]
机构：
[1] Chungnam Natl Univ, Dep EE, Taejon, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 03期
关键词：
Nickel silicide; titanium; co-sputtering; two-step RTP; thermal stability;
D O I：
10.5573/JSTS.2013.13.3.252
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.
引用
收藏
页码：252 / 258
页数：7
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