Anisotropic magneto re si stance and spin-valve effect in all-metal mesoscopic spin-valve devices

被引：6
|
作者：
van Staa, A
Meier, G
机构：
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 31卷 / 02期
关键词：
spin-polarized transport; magnetoresistance; spin-valve effect;
D O I：
10.1016/j.physe.2005.11.006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have fabricated all-metal lateral spin-valve devices consisting of two permalloy electrodes and ail interconnecting aluminum strip. The micromagnetic behavior of the device has been imaged with a magnetic-force microscope in external magnetic fields at room temperature. During a single cooling cycle at temperatures between 2 and 120 K we have measured the anisotropic magnetoresistance of both electrodes and the magnetoresistance of the entire device. In the latter, we can clearly identify the contributions of the anisotropic magnetoresistance and the mesoscopic spin-valve effect. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：142 / 147
页数：6
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