Anisotropic magneto re si stance and spin-valve effect in all-metal mesoscopic spin-valve devices

被引:6
|
作者
van Staa, A
Meier, G
机构
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
来源
关键词
spin-polarized transport; magnetoresistance; spin-valve effect;
D O I
10.1016/j.physe.2005.11.006
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have fabricated all-metal lateral spin-valve devices consisting of two permalloy electrodes and ail interconnecting aluminum strip. The micromagnetic behavior of the device has been imaged with a magnetic-force microscope in external magnetic fields at room temperature. During a single cooling cycle at temperatures between 2 and 120 K we have measured the anisotropic magnetoresistance of both electrodes and the magnetoresistance of the entire device. In the latter, we can clearly identify the contributions of the anisotropic magnetoresistance and the mesoscopic spin-valve effect. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:142 / 147
页数:6
相关论文
共 50 条
  • [21] AMR effect in spin-valve structure
    Uehara, Y
    Yamada, K
    Kanai, H
    IEEE TRANSACTIONS ON MAGNETICS, 1996, 32 (05) : 3431 - 3433
  • [22] AMR effect in spin-valve structure
    Fujitsu Ltd, Atsugi, Japan
    IEEE Trans Magn, 5 pt 1 (3431-3433):
  • [23] Theory of the ac Spin-Valve Effect
    Kochan, Denis
    Gmitra, Martin
    Fabian, Jaroslav
    PHYSICAL REVIEW LETTERS, 2011, 107 (17)
  • [24] Effect of angular biasing on the magnetic performance of spin-valve devices
    Lederman, M
    Tong, HC
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 4976 - 4978
  • [25] The optimised spin-valve magnetotransistor
    Avram, M.
    Avram, A. M.
    Vasilco, R.
    Volmer, M.
    Popescu, A.
    Ghiu, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 152 (1-3): : 72 - 75
  • [26] Noise in spin-valve sensors
    Hill, EW
    Nor, AF
    IEEE TRANSACTIONS ON MAGNETICS, 2001, 37 (04) : 2031 - 2033
  • [27] Avalanche spin-valve transistor
    Russell, KJ
    Appelbaum, I
    Yi, W
    Monsma, DJ
    Capasso, F
    Marcus, CM
    Narayanamurti, V
    Hanson, MP
    Gossard, AC
    APPLIED PHYSICS LETTERS, 2004, 85 (19) : 4502 - 4504
  • [28] A spin-valve memory cell
    Wang, ZG
    Nakamura, Y
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 159 (1-2) : 233 - 235
  • [29] Development of the spin-valve transistor
    Monsma, DJ
    Vlutters, R
    Shimatsu, T
    Keim, EG
    Mollema, RH
    Lodder, JC
    IEEE TRANSACTIONS ON MAGNETICS, 1997, 33 (05) : 3495 - 3499
  • [30] Development of the spin-valve transistor
    Univ of Twente, Enschede, Netherlands
    IEEE Trans Magn, 5 pt 2 (3495-3499):