Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories

被引：9

作者：

Song, H. J. ^{[1
,2
]}

Wang, J. B. ^{[1
,2
]}

Zhong, X. L. ^{[1
,2
]}

Cheng, J. J. ^{[1
,2
]}

Jia, L. H. ^{[1
,2
]}

Wang, F. ^{[1
,2
]}

Li, B. ^{[1
,2
]}

机构：

[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China

[2] Xiangtan Univ, Fac Mat Optoelect & Phys, Xiangtan 411105, Hunan, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期

基金：

中国国家自然科学基金;

关键词：

SOLUTION DEPOSITION; SINGLE-CRYSTALS; ELECTRORESISTANCE; POLARIZATION; BIFEO3;

D O I：

10.1063/1.4855555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The switchable diode effect is found in the Bi3.15Nd0.85Ti3O12 (BNT) polycrystalline thin films with a residual polarization (2P(r)) of 55 mu C/cm(2) fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The consistencies of P-V and I-V curves demonstrate that the switchable diode effect is mainly triggered by polarization modulated Schottky-like barriers. The ON/OFF ratio of resistive switching based on these switchable diodes is more than 3 orders during the retention capacity measurement, which indicates that the polycrystalline BNT thin films are promising for the resistive memories applications. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 50 条

[41] DC conduction behavior of Bi3.15Nd0.85Ti3O12 thin films grown by RF-magnetron sputtering
Lee, Hai-Joon
Ahn, Chang Won
Kang, Sun Hee
Do Kim, Chang
Kim, Ill-Won
Kim, Jin Soo
Lee, Jeong Sik
JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 851 - 854
[42] Effect of TiO2 seeding layer on crystalline orientation and ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films
Li, Jia
Yu, Jun
Peng, Gang
Wang, Yun-Bo
Zhou, Wen-Li
Wuji Cailiao Xuebao/Journal of Inorganic Materials, 2007, 22 (06): : 1192 - 1196
[43] Effect of TiO2 seeding layer on crystalline orientation and ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films
Li Jia
Yu Jun
Peng Gang
Wang Yun-Bo
Zhou Wen-Li
JOURNAL OF INORGANIC MATERIALS, 2007, 22 (06) : 1192 - 1196
[44] Temperature dependence of polarization switching properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin film
Zhang, Y.
Zhong, X. L.
Chen, Z. H.
Wang, J. B.
Zhou, Y. C.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
[45] Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation
Shi, Qunji
Ma, Ying
Li, Yushu
Zhou, Yichun
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (04): : 452 - 454
[46] Multiple-Kolmogorov-Avrami-Ishibashi polarization switching kinetics model for Bi3.15Nd0.85Ti3O12 thin films
Zhang, Y.
Zhong, X. L.
Zhang, Z. H.
Wang, J. B.
Zhou, Y. C.
THIRD INTERNATIONAL CONFERENCE ON SMART MATERIALS AND NANOTECHNOLOGY IN ENGINEERING, 2012, 8409
[47] Effects of film thickness on microstructure and properties of Bi3.15Nd0.85Ti3O12 thin films fabricated by chemical solution deposition
Liao, M.
Zhong, X. L.
Qiao, Y.
Wang, J. B.
Zhou, Y. C.
Liao, H.
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 487 (1-2) : 331 - 334
[48] Flexible ferroelectric capacitors based on Bi3.15Nd0.85Ti3O12/muscovite structure
Tu, Nanying
Jiang, Jie
Chen, Qiang
Liao, Jiajia
Liu, Wenyan
Yang, Qiong
Jiang, Limei
Zhou, Yichun
SMART MATERIALS AND STRUCTURES, 2019, 28 (05)
[49] Crystallization and electrical characteristics of ferroelectric Bi3.15Nd0.85Ti3O12 thin films prepared by a sol-gel process
Qiao, Y.
Lu, C. J.
Qi, Y. J.
Zhou, Y. H.
PHYSICA B-CONDENSED MATTER, 2008, 403 (13-16) : 2488 - 2494
[50] Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation
Feng Yang
Yichen Guo
Zhihao Zong
Xuehong Hao
Yiwen Shi
Minghua Tang
Journal of Electronic Materials, 2016, 45 : 3540 - 3545

← 1 2 3 4 5 →