Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories

被引：9
|
作者：
Song, H. J. [1 ,2 ]
Wang, J. B. [1 ,2 ]
Zhong, X. L. [1 ,2 ]
Cheng, J. J. [1 ,2 ]
Jia, L. H. [1 ,2 ]
Wang, F. [1 ,2 ]
Li, B. [1 ,2 ]
机构：
[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Fac Mat Optoelect & Phys, Xiangtan 411105, Hunan, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期
基金：
中国国家自然科学基金;
关键词：
SOLUTION DEPOSITION; SINGLE-CRYSTALS; ELECTRORESISTANCE; POLARIZATION; BIFEO3;
D O I：
10.1063/1.4855555
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The switchable diode effect is found in the Bi3.15Nd0.85Ti3O12 (BNT) polycrystalline thin films with a residual polarization (2P(r)) of 55 mu C/cm(2) fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The consistencies of P-V and I-V curves demonstrate that the switchable diode effect is mainly triggered by polarization modulated Schottky-like barriers. The ON/OFF ratio of resistive switching based on these switchable diodes is more than 3 orders during the retention capacity measurement, which indicates that the polycrystalline BNT thin films are promising for the resistive memories applications. (C) 2013 AIP Publishing LLC.
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页数：5
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