Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

被引：6
|
作者：
Ohtake, A
Kuo, LH
Yasuda, T
Kimura, K
Miwa, S
Yao, T
Nakajima, K
Kimura, K
机构：
[1] KYOTO UNIV,DEPT ENGN PHYS & MECH,KYOTO 60601,JAPAN
[2] ANGSTROM TECHNOL PARTNERSHIP,TSUKUBA,IBARAKI 305,JAPAN
[3] NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
[4] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.589446
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied growth mode and defect generation in heteroepitaxy of ZnSe on Te-terminated GaAs(001) surfaces. The high saturation coverage of Zn on Te-terminated GaAs enhances the layer-by-layer growth of ZnSe. However, high densities of faulted defects (similar to 5 x 10(8)/cm(2)) are generated in the ZnSe film. We have found that the generation of defects is not necessarily ascribed to an island growth mode, but is closely related to the formation of a vacancy-contained Ga-Te interface layer. (C) 1997 American Vacuum Society. [S0734-211X(97)07604-X].
引用
收藏
页码：1254 / 1259
页数：6
相关论文
共 50 条
  • [31] Role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)
    Applied Physics Letters, 1998, 73 (07):
  • [32] The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)
    Miwa, S
    Kuo, LH
    Kimura, K
    Yasuda, T
    Ohtake, A
    Jin, CG
    Yao, T
    APPLIED PHYSICS LETTERS, 1998, 73 (07) : 939 - 941
  • [33] Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
    Sasaki, Takuo
    Suzuki, Hidetoshi
    Sai, Akihisa
    Takahasi, Masamitu
    Fujikawa, Seiji
    Kamiya, Itaru
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 13 - 16
  • [34] RECONSTRUCTION AND DEFECT STRUCTURE OF VICINAL GAAS(001) AND ALXGA1-XAS(001) SURFACES DURING MBE GROWTH
    DAWERITZ, L
    HEY, R
    SURFACE SCIENCE, 1990, 236 (1-2) : 15 - 22
  • [35] Structure and energetics of as dimers on GaAs:(chalcogen)(001) surfaces and GaAs/Te/InAs interface
    Miwa, RH
    Ferraz, AC
    APPLIED SURFACE SCIENCE, 1998, 123 : 449 - 453
  • [36] PASSIVATION OF GAAS(001) SURFACES BY CHALCOGEN ATOMS (S, SE AND TE)
    OHNO, T
    SURFACE SCIENCE, 1991, 255 (03) : 229 - 236
  • [37] INAS EPITAXIAL NANOCRYSTAL GROWTH ON SE-TERMINATED GAAS(001)
    WATANABE, Y
    MAEDA, F
    OSHIMA, M
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 143 - 148
  • [38] MBE GROWTH AND CHARACTERIZATION OF (ZN,MN)SE/ZNSE AND MNSE/ZNSE STRUCTURES ON (001) GAAS
    HOFFMANN, N
    GRIESCHE, J
    HEIMBRODT, W
    GOEDE, O
    JACOBS, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 347 - 351
  • [39] A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies
    Wolfframm, D
    Evans, DA
    Westwood, DI
    Riley, J
    JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 119 - 126
  • [40] Growth of ZnSe-based compounds on Ge-terminated GaAs surface
    Saitoh, T
    Tsujimura, A
    Nishikawa, T
    Watakabe, A
    Sasai, Y
    CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 141 - 146
12345