Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

被引：6
|
作者：
Ohtake, A
Kuo, LH
Yasuda, T
Kimura, K
Miwa, S
Yao, T
Nakajima, K
Kimura, K
机构：
[1] KYOTO UNIV,DEPT ENGN PHYS & MECH,KYOTO 60601,JAPAN
[2] ANGSTROM TECHNOL PARTNERSHIP,TSUKUBA,IBARAKI 305,JAPAN
[3] NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
[4] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.589446
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied growth mode and defect generation in heteroepitaxy of ZnSe on Te-terminated GaAs(001) surfaces. The high saturation coverage of Zn on Te-terminated GaAs enhances the layer-by-layer growth of ZnSe. However, high densities of faulted defects (similar to 5 x 10(8)/cm(2)) are generated in the ZnSe film. We have found that the generation of defects is not necessarily ascribed to an island growth mode, but is closely related to the formation of a vacancy-contained Ga-Te interface layer. (C) 1997 American Vacuum Society. [S0734-211X(97)07604-X].
引用
收藏
页码：1254 / 1259
页数：6
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