MOSFET Performance and Scalability Enhancement by Insertion of Oxygen Layers

被引：0
|
作者：
Xu, N. [1 ]
Damrongplasit, N. [1 ]
Takeuchi, H. [2 ]
Stephenson, R. J. [2 ]
Cody, N. W. [2 ]
Yiptong, A. [2 ]
Huang, X. [2 ]
Hytha, M. [2 ]
Mears, R. J. [2 ]
Liu, Tsu-Jae King [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Mears Technol, Newton, MA 02459 USA
来源：
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2012年
关键词：
ELECTRON-MOBILITY; STRAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Sensorconnect performance and scalability experiments
    Hoag, Joseph
    Phillips, Reid
    Thompson, Craig
    Huetter, Ray
    Veizades, John
    2007 IEEE INTERNATIONAL CONFERENCE ON RFID, 2007, : 230 - +
  • [32] Performance and Scalability of Voldemort NoSQL
    Neves, Ricardo
    Bernardino, Jorge
    2015 10TH IBERIAN CONFERENCE ON INFORMATION SYSTEMS AND TECHNOLOGIES (CISTI), 2015,
  • [33] AUTOMOD®: PERFORMANCE, SCALABILITY AND ACCURACY
    Muller, Daniel J.
    2017 WINTER SIMULATION CONFERENCE (WSC), 2017, : 4451 - 4451
  • [34] ENHANCEMENT OF ENERGY PRODUCT WITH INSERTION OF Ti BETWEEN EXCHANGE COUPLED Sm-Co AND Fe LAYERS
    Shahzad, Furrukh
    Siddiqi, Saadat Anwar
    Yan, Shi-Shen
    Anwar, M. Sabieh
    Ramay, S. M.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (22): : 2957 - 2963
  • [35] A path to scalability and efficient performance
    Shank, CK
    Craig, G
    Lea, D
    LANGUAGES, COMPILERS AND RUN-TIME SYSTEMS FOR SCALABLE COMPUTERS, 1996, : 99 - 109
  • [36] Artificial Dielectric Layers for the Performance Enhancement of Slot Antennas on a Dielectric Lens
    Syed, Waqas H.
    Neto, Andrea
    2012 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM (APSURSI), 2012,
  • [37] Power MOSFET performance
    Texas Instruments Power Stage BU, 116 Research Drive, Bethlehem
    PA
    18015, United States
    SpringerBriefs Appl. Sci. Technol., (25-35):
  • [38] Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction
    Wang, Qing-yuan
    Wang, Ying
    Fei, Xin-Xing
    Li, Xing-ji
    Yang, Jian-qun
    Yu, Cheng-hao
    MICROELECTRONICS RELIABILITY, 2024, 152
  • [39] Enhancement of performance of GaN-based light-emitting diodes by insertion and optimization of n-InGaN/GaN composite current-spreading layers
    Xu, Jie
    Zhang, Xiong
    Yang, Hongquan
    Guo, Hao
    Zheng, Yuanzhi
    Zhou, Debao
    Cui, Yiping
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (02)
  • [40] Scalability enhancement of AODV using local link repairing
    Jain, Jyoti
    Gupta, Roopam
    Bandhopadhyay, T. K.
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2014, 101 (09) : 1230 - 1243
12345