MOSFET Performance and Scalability Enhancement by Insertion of Oxygen Layers

被引：0

作者：

Xu, N. ^{[1
]}

Damrongplasit, N. ^{[1
]}

Takeuchi, H. ^{[2
]}

Stephenson, R. J. ^{[2
]}

Cody, N. W. ^{[2
]}

Yiptong, A. ^{[2
]}

Huang, X. ^{[2
]}

Hytha, M. ^{[2
]}

Mears, R. J. ^{[2
]}

Liu, Tsu-Jae King ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Mears Technol, Newton, MA 02459 USA

来源：

2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2012年

关键词：

ELECTRON-MOBILITY; STRAIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.

引用

页数：4

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