Emission properties of single-photon sources based on CdTe/ZnTe quantum dots

被引：0
|
作者：
Rakhlin, M. V. [1 ]
Belyaev, K. G. [1 ]
Sorokin, S. V. [1 ]
Gronin, S. V. [1 ]
Mukhin, I. S. [2 ,3 ]
Shubina, T. V. [1 ]
Ivanov, S. V. [1 ]
Toropov, A. A. [1 ]
机构：
[1] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia
[2] St Petersburg Acad Univ RAS, 8-3 Khlopina Str, St Petersburg 194021, Russia
[3] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia
来源：
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷
基金：
俄罗斯科学基金会;
关键词：
D O I：
10.1088/1742-6596/816/1/012025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on single photon emission from single CdTe/ZnTe quantum dots (QDs) grown by thermally-activated molecular beam epitaxy providing a reduced QD lateral density below 10(10) cm(-2). For micro-photoluminescence spectroscopy studies and correlation measurements, the mesa structures of 200 and 500 nm diameters are fabricated by combination of electron-beam lithography and reactive plasma etching. Autocorrelation function of photons emitted from a single QD under cw excitation demonstrates antibunching with a value of g((2))(0) similar to 0.3 that is a signature of non-classical light.
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页数：5
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