A broad-band active frequency doubler operating up to 120 GHz

被引：0
|
作者：
Puyal, V. [1 ]
Konczykowska, A. [1 ]
Nouet, P. [1 ]
Bernard, S. [1 ]
Riet, M. [1 ]
Jorge, F. [1 ]
Godin, J. [1 ]
机构：
[1] Alcatel Thales III V Lab, F-91461 Marcoussis, France
来源：
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broad-band monolithic integrated active frequency doubler operating in DC-120 GRz frequency range is presented and compared with several previous versions. The circuit is fabricated in a self-aligned InP DHBT process. Circuit measurements show sinusoidal output waveform at 120 GHz. For -8 dBm input power, the doubler has a maximum conversion gain of -0.25 dB at 50 GHz due to a peaking inductor on the doubler output.
引用
收藏
页码：557 / 560
页数：4
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