A broad-band active frequency doubler operating up to 120 GHz

被引：0

作者：

Puyal, V. ^{[1
]}

Konczykowska, A. ^{[1
]}

Nouet, P. ^{[1
]}

Bernard, S. ^{[1
]}

Riet, M. ^{[1
]}

Jorge, F. ^{[1
]}

Godin, J. ^{[1
]}

机构：

[1] Alcatel Thales III V Lab, F-91461 Marcoussis, France

来源：

GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broad-band monolithic integrated active frequency doubler operating in DC-120 GRz frequency range is presented and compared with several previous versions. The circuit is fabricated in a self-aligned InP DHBT process. Circuit measurements show sinusoidal output waveform at 120 GHz. For -8 dBm input power, the doubler has a maximum conversion gain of -0.25 dB at 50 GHz due to a peaking inductor on the doubler output.

引用

页码：557 / 560

页数：4

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