Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE

被引：6

作者：

Joenen, H. ^{[1
]}

Rossow, U. ^{[1
]}

Langer, T. ^{[1
]}

Drager, A. ^{[1
]}

Hoffmann, L. ^{[1
]}

Bremers, H. ^{[1
]}

Hangleiter, A. ^{[1
]}

Bertram, F. ^{[2
]}

Metzner, S. ^{[2
]}

Christen, J. ^{[2
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Angew Phys, D-38106 Braunschweig, Germany

[2] Otto VonGuericke Univ Magdegurg, Inst Phys Expt, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Low press metalorganic vapor phase epitaxy; Quantum wells; Nitrides;

D O I：

10.1016/j.jcrysgro.2008.08.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InxGa1-xN/GaN quantum well (QW) Structures grown on c-plane and m-plane surfaces have been investigated intended for long wavelength light emitters. On c-plane InxGa1-xN QWs reached indium concentrations of x(ln) >= 35% with good optical and structural quality. For QW thicknesses d(QW)<= 2 nm a fully strained layer structure is observed and the indium concentration is quite homogenous. Under the same growth conditions of the QW region we find similar or even slightly larger indium concentrations on m-plane surfaces. QWs of such high indium concentrations, however, are very sensitive to the growth conditions of the subsequent layers and we observe degradation such as indium outdiffusion or partial relaxation for high growth temperatures. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4987 / 4991

页数：5

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