Impact of hydrogen on indium incorporation at m-plane and c-plane In0.25Ga0.75N surfaces: First-principles calculations

被引：22

作者：

Northrup, John E. ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 04期

关键词：

ab initio calculations; adsorbed layers; chemical potential; gallium compounds; III-V semiconductors; indium compounds; passivation; semiconductor growth; surface structure; wetting; wide band gap semiconductors; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; GROUND-STATE; LASER-DIODES; EPITAXY; GAINN;

D O I：

10.1103/PhysRevB.79.041306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present first-principles calculations for m-plane and c-plane In0.25Ga0.75N surfaces. The results elucidate the dependence of indium incorporation on growth conditions. For both surfaces the calculations indicate that In incorporation is energetically favorable provided the surface is wetted by In adlayers rather than passivated by hydrogen and NH2 groups. Growth of an In0.25Ga0.75N alloy therefore requires that the chemical potential of hydrogen be kept low. The results predict that a reduction in the abundance of hydrogen can lead to greater In incorporation on the m plane as well as the c plane.

引用

页数：4

共 6 条

[1] Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations
Akiyama, Toru
Yamashita, Tomoki
Nakamura, Kohji
Ito, Tomonori
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
[2] Hydrogen and magnesium incorporation on c-plane and m-plane GaN surfaces
Northrup, John E.
PHYSICAL REVIEW B, 2008, 77 (04)
[3] Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
Lai, K. Y.
Paskova, T.
Wheeler, V. D.
Chung, T. Y.
Grenko, J. A.
Johnson, M. A. L.
Udwary, K.
Preble, E. A.
Evans, K. R.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03): : 559 - 564
[4] Comparative study of the spontaneous and stimulated emission of M-plane and C-plane GaN/(Al,Ga)N quantum wells
Rau, B
Waltereit, P
Brandt, O
Trampert, A
Ploog, KH
Puls, J
Henneberger, F
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, 2001, 4283 : 96 - 103
[5] Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane (In,Ga)N Quantum Wells
Aleksiejunas, Ramunas
Nomeika, Kazimieras
Kravcov, Oleg
Nargelas, Saulius
Kuritzky, Leah
Lynsky, Cheyenne
Nakamura, Shuji
Weisbuch, Claude
Speck, James S.
PHYSICAL REVIEW APPLIED, 2020, 14 (05)
[6] Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE
Joenen, H.
Rossow, U.
Langer, T.
Drager, A.
Hoffmann, L.
Bremers, H.
Hangleiter, A.
Bertram, F.
Metzner, S.
Christen, J.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4987 - 4991

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